Effect of Ferric Catalyst on Chemical Decomposition of Polyimide-Film-Surface for Enhancing Chemical–Mechanical-Planarization Polishing-Rate

Abstract

In semiconductor devices, flexible displays and microelectromechanical systems (MEMS), polyimide has been utilized as a protecting layer, interlayer dielectric polymer for thin-film metallization and low-stress polymer for wafer-level packaging. Since, it has low stress, low thermal coefficient of expansion, low moisture, high modulus, good ductility, thermal stability, high glass transition temperature, and low process cost. However, the applications of polyimide required estentially chemical-mechanical-planarization (CMP) of the polyimide-film-surface. that can be challenging to enhance the polishing rate of the polyimide-film-surface because of the hard and covalently bonded nature of the polyimide-film surface.In this study, to enhance chemical dominant CMP, the chemical decomposition of the polyimide-film-surface was performed by hydrolysis reaction between ferric ions and oxygen atoms covalently bonded with pyromellitimide on the polyimide-film-surface during CMP, as shown in Fig. 1. The polyimide-film polishing rate was estimated as a function of ferric catanylst concentration in the CMP slurry;surprisingly, the polyimide film polishing rate(i.e., 1465A/min) peaked at a specific(i.e., 0.05wt%) ferric catalyst concentration, as shown in Fig. 2. This result indicates that the degree of chemical decomposition during CMP could be principally determined by ferric nitrate concentration. The details of both chemical and mechanical dominant polishing mechanisms will be presented. In addition, the evidence of the chemical composition of the polyimide-film-surface will be demonstrated, depending on the ferric catalyst concentation in the CMP slurry. Figure 1