Effect of exponentially distributed deep levels on the current and capacitance of a MIS diode

Abstract

An exponential distribution of deep level impurities has been considered to evaluate the current and capacitance of MIS diode with special reference to recombination effect modified for distributed defects. The dc current and conductance of the device have been found to vary non-linearly in logarithmic scale mainly because of recombination at lower voltages. Likewise, the capacitance of the device is also influenced due to the presence of exponentially distributed defects. The investigation reveals a distinct non-linearity in the 1/ C 2 vs. V characteristics with concavity upward or downward determined by the parametric values of the defects. The nature of variation of I– V and C– V characteristics have been found much sensitive to the parameters controlling the defect distribution.