Abstract

The frequency dependence of the capacitance of Schottky barriers is predicted for a single partially ionized deep level in combination with ionized shallow impurities. Shockley-Read recombination statistics, a gradient-free fermi level for free electrons and deep levels, a uniform impurity concentration, and an abrupt spatial transition in frequency response were assumed. The results apply at frequencies from d.c. to near that at which only the impurities in the bulk semiconductor respond and for any bias and temperature. A method is shown to determine the shallow and deep impurity concentrations, deep impurity energy level, and capture cross-section of the deep impurity level from the capacitance-frequency relationship at any temperature.

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