Effect of Excimer Laser Annealing on the Performance of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Abstract

This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 10 4 to 10 ―3 Ω cm). Our TFTs had a field-effect mobility of 21.7 cm 2 /V s, an on/off ratio of 1.2 × 10 8 , a threshold voltage of ―0.15 V, and a subthreshold swing of 0.26 V/decade.