Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Abstract

Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide solar cell performance was simulated using a PC-1D computer model. The effect of emitter parameter variation on the performance of an n/sup +//p/p/sup +/ heteroepitaxial InP/GaAs solar cell was studied. It was observed that thin and lightly doped emitters offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency versus dislocation density was studied. It is shown that heteroepitaxial cells with efficiencies similar to existing efficiencies (>16% AM0) of homojunction indium phosphide cells are possible if a dislocation density lower than 10/sup 6/ cm/sup -2/ can be achieved. A realistic optimized design study yields indium phosphide solar cells with over 22% AM0 efficiency at 25 degrees C. >