Abstract

Electron scrubbing is an effective method of degassing the microchannel plate(MCP). In the present work, we investigated the effect of electron scrubbing on MCP through characterizing the gain and dynamic range during and after the electron scrubbing. The gain of the MCP decreases to 25-30% of the initial gain with 28μA·h of electron scrubbing. The dynamic range can be broadened by electron scrubbing. The lower limit of the dynamic range of the MCP limited by the dark current of the test system does not change significantly and the upper limit of the dynamic response range is increased. The ratio of the upper limit before and after scrubbing is inversely proportional to that of the gain. The reasons for variation of gain and dynamic range were discussed, to provide reference for improving the performance of microchannel plate.

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