Abstract
We have studied experimentally the effect of several electron launcher structures on AlAs/GaAs double barrier resonant diodes (RTDs). The experimental results show that a linearly graded AlGaAs launcher structure improves the tunneling current by presumably removing the hump in the conduction band caused by the space charges near the n-i junction in the spacer layer. Peak current densities as high as 170 kA/cm2 with a peak-to-valley current ratio of 3.2 were obtained from these graded launcher RTDs. Compared with the conventional RTD, the graded launcher gives a 50% improvement in the peak current density while reducing the peak-current voltage by 40% and maintaining a similar peak-to-valley current ratio.
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