Abstract
The effect of nuclear radiations on the physical properties of gallium arsenide has been little investigated. There are in all only a few papers on this subject [1-10]. The energy spectrum of defects created during irradiation of gallium arsenide were examined in [5-7, 9-10], but insufficient data have been obtained to interpret them with any certainty. In the present work the electrical properties of gallium arsenide bombarded with 6.5 MeV electrons have been investigated. The electron source was a B-15 betatron. The specimens of n-type galiinm arsenide used had a current carrier concentration of 3.5 9 10 z~ -7 9 9 10~/cm ~ and a mobility of 2 9 10s-4 9 10 s emZ/V 9 The temperature variations of the Hall coefficient and conductivity were investigated before and after bombardment.
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