Effect of electric and stress field on structures and quantum conduction of Cu nanowires

Abstract

The ballistic transport properties of Cu nanowires under different electric and stress fields are investigated for future application in microelectronics using first-principles density-function theory. Relative to the case with the electric field only, the stability and quantum conduction of both nonhelical and helical atomic strands are enhanced by applying a stress field F. Under V = 1 V/Å, the most excellent quantum conductivity is exhibited at F = 1.5 nN for the nonhelical atomic strands while at F = 2 nN for the helical ones, and the latter is more stable with collapse-resistant F high as 3 nN compared to the former as 2 nN.