Abstract
The binding energy of ground state for hydrogenic impurity in multiple quantum dots is calculated in the framework of effective-mass approximation and using a variational method. It is shown that the binding energy is a function of the size of dots, impurity position and external fields strength. The binding energy has a maximum value when the impurity is located on the center of dots and decreases for other impurity positions. The external electric and magnetic fields change the magnitude and the position of peaks. PACS Codes 73.20.D; 71.21.La; 71.55.Eq
Highlights
The study of confined quantum systems has been the interesting subject of investigation since the beginning of quantum theory
4 Conclusion The binding energy in a multiple cylindrical quantum dots using the variational method and appropriate wave function is calculated for ZB GaN structures in the presence of electric and magnetic fields
The results clearly showed that the binding energy has three peaks, that are around the center of dots, and decreases as the dot size increases
Summary
The study of confined quantum systems has been the interesting subject of investigation since the beginning of quantum theory. The interest in the study of the physical properties of confined quantum systems such as quantum wells, wires, and dots, has increased, with the recent progress in semiconductor nanotechnology [1-5]. The impurity effects in ZB GaN-based multiple QDs have been investigated theoretically [15,16]. There have not been theoretical investigations on impurity states in ZB symmetric multiple GaN QDs under external electric and magnetic fields. In this paper the variational method is used for calculating the impurity binding energy in symmetric InGaN/GaN multiple quantum dots. In this regard, a trial wave function based on the carrier wave function in cylindrical quantum dot is introduced and the energy is calculated.
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