Effect of electric and magnetic field on impurity binding energy in InGaAsP/InP quantum ring

Abstract

The ground state binding energy of hydrogenic donor impurity is calculated using the plane wave basis method in InGaAsP/InP quantum ring under applied electric and magnetic fields. The results show that the binding energy is nonlinear function of ring height and outer radius. The binding energy has a maximum near the center of radial or axial direction. The external electric field changes the probability distribution of electron, and then the difference of binding energies for impurity located at symmetrical positions increases. The binding energy increases with the increase of magnetic field and the effect of magnetic field is more obvious along the direction of magnetic field.