Effect of Elastic Strain on Interband Tunneling in Sb-Doped Germanium

Abstract

The effects of uniaxial compression and of hydrostatic pressure on the direct and indirect tunneling processes in germanium tunnel diodes have been studied experimentally under forward and reverse bias at 4.2\ifmmode^\circ\else\textdegree\fi{}K and compared with Kane's theory. The diodes were formed by alloying indium doped with $\frac{3}{8}%$ gallium on (100) and (110) faces of germanium bars containing an antimony concentration of 5.5\ifmmode\times\else\texttimes\fi{}${10}^{18}$/${\mathrm{cm}}^{3}$. The first order change of the tunneling current with stress was measured at fixed bias voltages. For biases smaller than 8 mV the current is direct and not affected by the relative shifts of the (111) conduction band valleys. In the bias range of indirect tunneling the anisotropic tunneling from the (111) valleys was observed in agreement with theory. In the range of direct tunneling to the (000) conduction band the current change is correlated with the stress induced change of the direct band gap and of the energy separation between the (111) and (000) conduction bands. This separation was found to be 0.160\ifmmode\pm\else\textpm\fi{}0.005 eV at zero stress in agreement with optical measurements on degenerate germanium. Some details of the bias dependence of the pressure effect including some fine structure at small biases remain unexplained.