Abstract
The dependence of the average luminance on the parameters of the metal-insulator-semiconductor-insulator-metal structures in thin-film electroluminescent devices (TFELDs) and on the excitation conditions is found by solving kinetic equations for the variation in the concentration of excited emission centers in the phosphor layer of TFELDs for different driving voltage pulse shapes (triangular, trapezoidal, sinusoidal, and rectangular with an exponential leading edge). It is shown that for equal amplitudes and pulse repetition rates of a sign-changing symmetric voltage, the average luminance and luminous efficacy of TFELDs increase as the rate of rise of the voltage is increased for different driving voltage pulse shapes in the following sequence: triangular, sinusoidal, trapezoidal, rectangular. The calculations are confirmed by experiment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
