Abstract
The CaCu3Ti4O12 (CCTO) films with single- and double-sided CaTiO3 (CTO) buffer layers were grown on Pt∕Ti∕SiO2∕Si substrates by pulsed laser deposition at 650°C, which was lower than the normal deposition temperature of the CCTO films. The CTO layer was used as seeding layer to improve the crystallization of the CCTO films and could enhance the dielectric properties of the multilayered films. In addition, the multilayered films exhibited low frequency dielectric relaxation and reduced leakage current density, which could be ascribed to the improved interfacial characteristics between the CTO layer and the electrode. The conduction mechanisms of the single layered and multilayered films were also discussed briefly.
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