Abstract
This work investigates the effect of O-, and F-doped on the structure and dielectric properties of films deposited by decamethylcyclopentasiloxane (DMCPS) electron cyclotron resonance plasma. For the films deposited using DMCPS only, two kinds of typical film structures with or free of group can be obtained. By eliminating the group, the minimum dielectric constant low to 2.88 is obtained. By adding in the precursor, the value can be reduced to 2.62 due to the formation of more cages. By adding in the precursor, the value can be reduced to 2.45 due to the adsorption of large size groups and the increase of weak polar bonds. By adding in the precursor, however, the value increases to 3.19 due to the decrease of cage and the formation of group. Therefore, the dielectric constant of films prepared by DMCPS and O-, or F-doped depends not only on the cage but also on the polarization of bonds, such as the weak polar , , bonds and the strong polar bond.
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