Abstract
The effect of discharge current (Id) on the diamond structure has been investigated. The films deposited on Al substrate at a low substrate temperature (Ts) of about 200°C by DC plasma CVD are composed of ball-like grains containing microcrystalline diamond crystals with a hydrogenated amorphous component. When Id increases, the growth rate of the grains and the size of the diamond crystals increase, and the amorphous component decreases. These results show that the increase of Id enhances the diamond structure formation, in addition to the Ts factor's well known effect on the formation of a definite diamond film.
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