Abstract
Studies have been made on the effect of diffusion and modulated frequencies in an ion-implanted Si photo MESFET (OPFET). It is observed that for a particular radiation flux density and absorption coefficient, the device characteristics ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I-V</tex> ), threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> ), and intrinsic device parameters (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> ,Ras <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> , etc.) change only at millimeter-wave frequencies. When the effect of diffusion is ignored, the modulated frequency alone also changes these terminal properties of the OP-FET at millimeter-wave frequencies, but then the changes are more prominent. The diffusion simply reduces these effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
