Effect of different thickness crystalline SiC buffer layers on the ordering of MgB2 films probed by extended x-ray absorption fine structure

Abstract

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB2 films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al2O3 (0001) substrates by using a pulsed laser deposition method, and then MgB2 films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB2 film decreased with increasing thickness of SiC buffer layer. However, the Tc dropping went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB2 films, which is believed to be related to the ordering of MgB2 atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB2 films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB2 films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB2 films seemingly have evident effects on the alteration of the local structure of the MgB2 film.