Effect of Different Etching Processes on Surface Defects of Quartz Crystals

Abstract

In high-power laser systems, the loading capacity of fused silica components under 351 nm irradiation is an important factor limiting their ability to increase output power, and in the current study, the damage threshold enhancement of fused silica components after RIE and AMP treatments has been investigated. Sub-surface defects in fused silica components after RIE treatment have also been investigated, but the reason for the high damage threshold could never be explained. Since quartz crystals and fused silica belong to the same silica system, and quartz crystals have more characterisation means than fused silica, we can extrapolate to fused silica by studying quartz crystals. We can extrapolate to fused silica by studying quartz crystals, which are characterised by more means than fused silica, and prove that the extrapolation is correct by characterising fused silica. In this study, the relationship between the etching process and the damage threshold is concluded by studying different RIE etching processes, and the damage threshold of the samples is optimal when the etching depth is 1 um.