Abstract
The effect of device parameters on the breakdown voltage of impact-ionization metal–oxide–semiconductor (I-MOS) devices has been investigated. In order to realize I-MOS devices with sufficiently low breakdown voltage, we examined the downscaling of the device size and the introduction of narrow-bandgap material by using device simulation. The downscaling of the device size included the reduction of i-region length (LI), source extension junction depth (xj,se) and gate oxide thickness (tox). However, the acceptable breakdown voltage (<-5 V) could not be achieved. Thus, narrow-bandgap material is necessary in addition to device scaling. A strained silicon-on-insulator (SSOI) substrate with sufficient bandgap reduction will meet the demands.
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