Effect of deposition temperature on the properties of F and Ti co-doped zinc oxide films

Abstract

ZnO + 1.5 wt.% TiO2 powder is calcined at [Formula: see text] and sintered at [Formula: see text] to prepare the Ti-doped ZnO ceramic target, and RF sputtering is used to deposit F and Ti co-doped ZnO (FTZO) films by introducing Ar + CF4 mixing gas (CF4 flow rate is 0.2%) into the deposition chamber. The deposition temperature is changed from room temperature to [Formula: see text], and the thicknesses of all deposited FTZO films are controlled at about 320 nm. After FTZO films are deposited, X-ray diffraction pattern is used to analyze their crystalline properties, field-effect scanning electron microscope is used to observe their surface morphologies and confirm their thicknesses. n&k analyzer is used to measure the transmittance spectra in the wavelength range of 300–1100 nm and we find that the absorption edge of FTZO films is shifted to lower wavelength as the deposition temperature increases. The optical energy band gap of FTZO films is calculated using the transmittance spectra and the electrical properties of FTZO films are measured using a Hall equipment. Finally, secondary-ion mass spectrometry is used to analyze the C, O, F, Si and Ti elements with different deposition temperatures for confirming the existence and distribution of [Formula: see text] ions and non-existence of C element.