Abstract
Admittance measurements of p-type Hg 0.8Cd 0.2Te MIS devices fabricated with ZnS deposited at different temperatures as insulator are presented and analyzed. Good interface quality is obtained when ZnS is deposited at 20 ° C. The use of higher deposition temperature produces an apparent increase in the net acceptor concentration at the surface and/or a higher interface state density. The film adherence improves when the deposition temperature is increased.
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