Abstract
Three sputtering methods, co-sputtering, multilayer alternate-sputtering, and mixed-target sputtering, have been mainly utilized for depositing erbium–ytterbium silicate films. The deposition mechanisms of different sputtering methods are studied to analyze and optimize the infrared photoluminescence of the erbium–ytterbium silicate films. About two orders of magnitude photoluminescence intensity improvements were obtained in the co-sputtered, alternate-sputtered films, and mixed-target sputtering methods with the optimum Er:Yb ratio of 1:5. Then, the mixed-target sputtered films can have the strongest photoluminescence intensity, with the best crystalline qualities. This is about 2–4 times higher than photoluminescence intensity of the other two sputtering methods. The results not only provide foundation and guidance for the erbium–ytterbium silicate light-source devices preparation, but also indicate the great prospects for applications of erbium–ytterbium silicate films in scale-integrated light sources.
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