Abstract
The interaction between the dielectric and the metal gates is crucial for effective workfunction and V T. In this work, we investigate the effect of a degas step just before the metal gate deposition. The purpose of this step is to remove the water adsorbed at the surface of the dielectric by heating it under vacuum. Removing the water also means the suppression of an O source during following processing steps of the device. This leads to lower oxygen vacancies passivation. When the maximum of water is removed from the surface, NMOS long channel V T is decreased and PMOS long channel absolute V T is increased. From the dielectric point of view, degassing leads to lower intrinsic quality as measured by gate leakage increase as a function of the temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
