Abstract
Lifetime shortening of a large electron-hole drop in zinc-doped Ge is reported by using time-resolved photoluminescence technique. The lifetime decreases remarkably with the concentration of a double acceptor Zn up to ∼10 16 cm −3. This makes a striking contrast to the result by Chen et al. for ordinary electron-hole droplets in Ge doped with shallow impurities. Additional information from microwave Alfvén wave dimensional resonance of a large drop is also presented.
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