Abstract
The characteristics of silicon–nitride deposited at the temperature lower than 100 °C using an internal linear-type inductively coupled plasma were investigated as functions of the NH3/SiH4 ratio and ion bombardment energy applied to the substrate (dc bias voltage) for use as the gate dielectric material of flexible display devices. Decreasing the NH3/SiH4 ratio to 2 and increasing the dc bias voltage to -150 V decreased the Si–O bonding and increased the Si–N bonding, resulting in a more nitrogen-rich SiNx thin film. In addition, the capacitance-voltage measurement of the metal-insulator-semiconductor devices fabricated with the SiNx thin film deposited at various dc bias voltages showed a hysteresis curve in the cyclic voltage measurement and the increase of the dc bias voltage with decreasing hysteresis voltage. The interface trap density measured at a dc bias voltage of -150 V and NH3/SiH4 ratio of 2 showed the lowest interface trap charge density of about 2×1011 cm-2. Under these conditions, the dielectric constant was as high as 7.2.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call