Abstract
Self-luminescence in tritiated amorphous silicon is observed. The substitution of tritium for hydrogen in a hydrogenated semiconductor provides a powerful tool for the study of dangling bonds. The radioactive decay of tritium leads to an increase in the dangling-bond concentration in the material of several orders of magnitude over a period of a few weeks with little other modification in the structure of the material. We report here results of a study of photoluminescence as a function of time in tritiated amorphous silicon. An analysis of the data in terms of a simple theoretical model in which dangling bonds are treated as nonradiative recombination centers yields a capture radius of 32 Å for the D0 defect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
