Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET

Abstract

Power consumption of the device enhances as temperature rises, degrading the performance of conventional MOSFET. In the present paper the performance parameters of proposed (NC-FinFET) device has been found to be improved with the rise in temperature compared to baseline FinFET. The simulation is carried out in Sentaurus TCAD and several electrical characteristics are extracted. The results are explained on the basis of Landau theory, with the incorporation of 5 nm FE layer in the gate stack. Mathematical modeling of electrical parameters like drain current (Ids), threshold voltage (Vth), transconductance (gm) and subthreshold swing (SS) has been done to incorporate the effect of temperature considering the ferro and paraelectric phase. The said parameters have been investigated for temperature variations from 250 to 500 K, in ferroelectric and paraelectric phases that are distinguished through the Curie temperature (Tc = 460 ± 10 K). The Vth and SS show a non linear nature at T < Tc and linear behavior T > Tc. The transconductance shows peak value at Tc. Finally, the proposed NC-FINFET is utilized to realize an inverter. The proposed inverter design shows a better performance matrix interms of average propagation delay (tp) as compared to baseline Complementary FINFET inverter.