Effect of CuI on the thermoelectric properties of recycled n-type Bi2(Te, Se)3 scraps

Abstract

In this work, n-type Bi2(Te, Se)3-based thermoelectric recycled samples were fabricated from scraps by adding some content of CuI (x wt.%, x = 0, 2, 4) via melting and SPS sintering method. Carrier concentration of the samples doped with CuI can be improved while the values of κL+κB were decreased at high temperature. A lowest κL+κB value of 0.41 W m−1 K−1 at 500 K was obtained for sample with 4 wt% CuI. Samples doped with CuI parallel to the pressing direction had higher PF values and similar ZT values compared with the sample without CuI at 500 K, while that of vertically CuI doped samples was reduced.