Abstract
Growth behaviors of intermetallic compounds (IMCs) and Kirkendall voids in Cu/Sn/Cu microbump were systematically investigated by an in-situ scanning electron microscope observation. Cu–Sn IMC total thickness increased linearly with the square root of the annealing time for 600 h at 150 °C, which could be separated as first and second IMC growth steps. Our results showed that the growth behavior of the first void matched the growth behavior of second Cu6Sn5, and that the growth behavior of the second void matched that of the second Cu3Sn. It could be confirmed that double-layer Kirkendall voids growth kinetics were closely related to the Cu–Sn IMC growth mechanism in the Cu/Sn/Cu microbump, which could seriously deteriorate the mechanical and electrical reliabilities of the fine-pitch microbump systems.
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