Abstract
Highly (100)- and (111)-oriented (Pb 0.90La 0.10)Ti 0.975O 3 (PLT) thin films were deposited on the Pt(111)/Ti/SiO 2/Si(100) substrates by radio frequency magnetron sputtering technique with and without a PbO x buffer layer. The effect of crystallization orientation on the domain structure and ferroelectric properties of PLT thin films was investigated. The results show that the PLT thin films with different orientations possess different intensity of out of plane polarization and ferroelectric properties, (111)-oriented PLT thin films with stronger out of plane polarization exhibit higher remnant polarization (2 P r = 45.6 μC/cm 2) than these of random-oriented PLT thin films (2 P r = 33.9 μC/cm 2), and (100)-oriented PLT thin films (2 P r = 26.3 μC/cm 2) at the same applied field.
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