Abstract
Al(Zn) and Al(Mg) single crystals have been prepared both by conventional Bridgman methods and by vapor transport diffusion of Zn or Mg into pure Al Bridgman crystals. The room temperature critical resolved shear stresses of Al(Zn) are less for all crystals prepared by the latter method, while the behavior of Al(Mg) varies with magnesium content. At low Mg the CRSS's are less for vapor-diffused crystals, while at higher Mg the CRSS's are less for Bridgman crystals. The results can be qualitatively explained in terms of initial dislocation densities.
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