Effect of crossed electric and magnetic fields on the gate capacitance in n-channel inversion layers of Kane-type semiconductors

Abstract

We study the effect of cross-field configuration on the gate capacitance inn-channel inversion layers of Kane-type semiconductors by formulating the model expression within the framework of K·p formalism. It is found, takingn-channel inversion layers on CdGeAs2 as example, that the gate capitances oscillate with inverse quantizing magnetic field, increase with increasing surface fields and are in agreement with the experimental data, as reported elsewhere. The corresponding results for three band Kane model, two-band Kane model and that of parabolic energy band have been obtained as special cases of the generalized expressions.