Abstract
This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance (g<SUB>m</SUB>) and the drain conductance (g<SUB>d</SUB>) increase with an increase in p-type counter-doping thickness (T<SUB>c</SUB>). Very high value of transconductance (g<SUB>m</SUB>= 38 mS/㎛) is observed at 2.2 ㎚ channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.
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