Abstract
The present study describes a method enabling the metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) films. Glass substrates coated with a-Si films were contacted with ground nickel sheets under compressive stresses ranging from 3.7 to 265.8MPa at 550°C for 1h. Subsequently, the nickel sheet and stress were removed and the specimens were annealed at 550°C for 1 to 4h. The experimental results indicate that the extent of MILC decreased when the preliminary compressive stress was increased, while all specimens exhibited the same rate of lateral crystallization during annealing. The present study indicates that, by applying an appropriate compressive stress (~4MPa), an effective method to reduce the residual Ni content in polycrystalline silicon (poly-Si) can be obtained.
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