Abstract
The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (InxGa1 − xAs and InxGa1 − xP) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (InxGa1 − xAs and InxGa1 − xP buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.
Published Version
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