Abstract
As 30Te 70− x Ga x ( x=0.5, 1, 3, 6 and 10 at.%) chalcogenide thin films were studied. Specimens of thickness 2500 Å were used for resistivity ( ρ) measurements as a function of temperature ( T) in the temperature range from 300 to 443 K. The resistivity ( ρ) exhibits an activated temperature dependence in accordance with the relation ρ(T)=ρ 0 exp(ΔE /kT) . It was found that the activation energy for conduction (Δ E) and room temperature resistivity ( ρ 300) decrease with increasing Ga content up to 3 at.%. For x greater than 3 at.%, it was found that Δ E and ρ 300 increase with increasing Ga content. The results were discussed according to the valence alternation pair (VAP) model and the alloying effect. Thermal annealing above T g was found to decrease ρ and Δ E. The decrease of ρ and Δ E after annealing at T> T g was attributed to the amorphous–crystalline transformation. XRD, SAED, TEM and DSC were used to study the structure of the as-deposited and annealed films.
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