Abstract
The temperature dependence of the dielectric permittivity and polarization hysteresis loops of P(VDF-TrFE-CFE) polymer films with different compositions are studied. Among them, the three compositions, 51.3/48.7/6.2, 59.8/40.2/7.3, and 70/30/8.1, are characterized for the first time. Relaxor behavior is confirmed for all studied samples. Increasing the CFE content results in lowering the freezing temperature and stabilizes the ergodic relaxor state. The observed double hysteresis loops are related to the field-induced transition to a ferroelectric state. The critical field corresponding to this transition varies with the composition and temperature; it becomes larger for temperatures far from the freezing temperature. The energy storage performance is evaluated from the analysis of unipolar polarization hysteresis loops. P(VDF-TrFE-CFE) 59.8/40.2/7.3 shows the largest energy density of about 5 J·cm−3 (at the field of 200 MV·m−1) and a charge–discharge efficiency of 63%, which iscomparable with the best literature data for the neat terpolymers.
Highlights
Alternative technologies in the energy generation sector, miniaturization in the electronics industry, and electric mobility have opened up many doors for advancements in the field of energy storage [1]
We have studied temperature dependence of dielectric permittivity and polarization of five different P(VDFx -TrFE1-x -CFEy ) compositions (Figure S1)
The terpolymer powders used in this study, which were synthesized via suspension polymerization [13], were purchased from Piezotech, Pierre-Bénite, France
Summary
Alternative technologies in the energy generation sector, miniaturization in the electronics industry, and electric mobility have opened up many doors for advancements in the field of energy storage [1]. For a non-linear or hysteretic material, the stored energy density in a polarization–electric field graph is given by the area between the charging branch of a dielectric displacement—electric field hysteresis loop and the dielectric displacement axis (Figure 1).
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