Abstract
Among several physical properties measured about mordenite Se (100− x) Te ( x) and trigonal Se (100− x) Te ( x) , we choose the electrical properties for our study in this article. The electrical properties of Se (100− x) Te ( x) ( x=0, 20, 40, 60, 80, 100) films of thickness about 100 nm, deposited by thermal evaporation onto glass substrate have been measured as a function of tellurium content. Electrical resistivity is observed to decrease with increased temperature and tellurium content. It is found that the activation energy varies from 0.87 eV to about 0.15 eV with increased concentration of tellurium. Sharp decrease of activation energy ( ΔE) and increase of carrier concentration ( n) for x > 50 has been ascribed to the phase transition from chain like structure ( M SeTe system) to trigonal structure ( t SeTe system), i.e. we clarify that the characteristic features of ( t SeTe) reflect in the concentration ( x) dependence of ΔE.
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