Abstract
Abstract The effect of plastic deformation and further annealing on the kinetics of growth of thin oxide films on copper at 30 C (86 F) has been investigated. Oxidation rate was found to decrease markedly with increasing deformation. Further annealing showed an increase in the rate, the most pronounced changes occurring during the recrystallization stage. Results are interpreted in the light of Cabrera-Mott theory of growth of very thin oxide films on metals. The change in rate has been related to the concentration of cation vacancies in the Cu2O semi-conductor, which is dependent on the lattice distortion and defect concentration of the substrate metal.
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