Effect of cold development on improvement in electron-beam nanopatterning resolution and line roughness

Abstract

This article presents the results about the effect of cold development on the improvement in patterning resolution and line edge roughness for electron-beam lithography resists. Cold development shows improved resolution and contrast for resists that are exposed by polymer chain scission. It does not work for chemically amplified resists. A discussion on why this works for resists like ZEP 520 and PMMA and not for positive chemically amplified resists (such as UV113) is presented. Results for 13 nm structures obtained after metal liftoff using a 30 kV e-beam tool using ZEP 520 resist are shown. These results have impact in the photomask industry and other manufacturers that require squeezing out as much resolution out of their existing tools and materials. It is found that, even with the improvement by cold development, there is a “shot noise” of 2% uncertainty limit that is not surpassed for resists exposed at 100kV. This explains why high throughput and high resolution electron-beam nanolithography is not possible.