Abstract
Induced coupled plasma etching was performed on poly-crystalline boron-doped diamond (BDD) films synthesized by microwave assisted chemical vapor deposition (MWCVD). Effects of the input power and of the gas composition and pressure on etching performances have been investigated. A basic aluminium layer and a new hybrid material have been studied as protecting film for the patterning. Best conditions to get high etch rates were a gas ratio Ar/O2 of 27% (vol.) under 10 mTorr at 200 W (input power). Aluminium (Al) masking induced un-intentional whiskers formation which was removable using CHF3 as a reactive gas with the drawback to lower the process selectivity. In order to get both a high etching rate and a high selectivity, a hybrid material based on an organic/mineral resin was then used as the masking material. This performing photoresist film allowed etching a 3.6-μm-thick BDD film at 200 nm min−1.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
