Abstract
The effect of Co+-ion implantation on the surface composition and the depth distribution profiles of atoms in a Si–Cu (100) heterostructure is investigated. After heating of the ion-implanted sample, a 50–60 A thick CoSi2 film is formed. It is revealed that after ion implantation the penetration depth of Cu atoms in Si becomes twice as large.
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More From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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