Effect of Co-Doping of Al3+, In3+, and Y3+ on the Electrical Properties of Zinc Oxide Varistors under Pre-Synthesizing BiSbO4.

Abstract

Under the premise of using the solid-phase method to pre-sinter Bi2O3 and Sb2O3 into BiSbO4 as a substitute for equal amounts of Bi2O3 and Sb2O3 in the formula, the effects of co-doping with In(NO3)3, Al(NO3)3, and Y(NO3)3 on the microstructure and electrical properties of ZnO varistors were studied. The experimental results show that with an increase in In3+-doped molar concentration, the leakage current of the ZnO varistor shows a rapid decrease and then a slow increase trend. However, the nonlinear coefficient is the opposite of it. With the combined effect of the rare earth element Y3+, the average grain size is significantly reduced, which leads to an increase in the voltage gradient. At the same time, a certain amount of doped In3+ and Al3+ is dissolved into the grains, resulting in a decrease in grain resistance and thus a low level of residual voltage. The varistor with 0.6 mol% In3+, 0.1 mol% Al3+, and 0.9 mol% Y3+ doping ratios exhibits excellent overall performance. The nonlinear coefficient is 62.2, with the leakage current being 1.46 µA/cm2 and the voltage gradient being 558 V/mm, and the residual voltage ratio is 1.73. The prepared co-doped ZnO varistors will provide better protection for metal oxide surge arresters.