Abstract
Reverse leakage current characteristics of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) with various chip geometries are examined. The effect of chip geometry on the reverse leakage current is negligible at a low voltage, but becomes apparent at a high voltage. The reverse breakdown voltage of LEDs decreases as the angle of vertex in the chip geometry decreases presumably because of a highly localised electric field strength near the vertex. This suggests that a chip geometry with a rounded vertex is suitable for reliable high-power LEDs.
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