Abstract
In order to define the role of doped Sn in highly-conducting sputtered indium tin oxide (ITO) films, the chemical state of Sn in the films and ITO targets has been investigated. The ITO films were prepared by dc magnetron sputtering from a sintered target comprised of a mixture of In 2O 3 and SnO 2. The chemical state of Sn in In 2O 3 was determined by Mössbauer spectroscopy and chemical analysis, and was classified as being one of two groups: SnO 2 grain segregated in In 2O 3, or Sn solved in In 2O 3 structure. ITO films a lower electrical resistivity exhibited higher solubility of Sn in In 2O 3. Lastly, the relation between the film properties and the chemical state of Sn in the targets is discussed.
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