Abstract
The growth of Hg1-xCdxTe (MCT) epilayers by isothermal vapor phase epitaxy (ISOVPE) on (100) CdTe/GaAs substrates, with various thicknesses of CdTe layers, is reported. Subsequent to ISOVPE growth of MCT layer, we observed the formation of triangular voids at the interface between CdTe and GaAs, which strongly depends on the thickness of the CdTe substrate layers. The problem of void formation and Ga outdiffusion can be overcome by using a sufficiently thick CdTe layer. Although the crystallinity of CdTe layers grown on GaAs by hot wall epitaxy (HWE) is strongly related to thickness, the quality of MCT epilayers is better than that of the substrate layer and is independent of the quality of CdTe layers. This result is attributed to the growth mechanism of ISOVPE being different from other epitaxial methods.
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