Abstract
Isothermal vapor phase epitaxy (ISOVPE) growth of Hg 1− x Cd x Te (MCT) and Hg 1− x (Cd 1− y Zn y ) x Te (MCZT) was carried out on the substrates of CdTe and nearly lattice matched Cd 1− y Zn y Te ( y=0.045, CZT) to HgTe, respectively. The properties of MCZT/CZT epilayers with lattice mismatch and Zn addition were characterized and compared with those of MCT/CdTe epilayers. There is no obvious difference in electrical properties between MCT and MCZT epilayers. The hardness of MCZT is significantly greater than that of MCT. This is a good indication of the stability of the MCZT. Full width at half maximum (FWHM) of a four crystal X-ray rocking curves for the lattice matched MCZT/CZT is extremely smaller than that of the MCT/CdTe and the smallest FWHM value 36 arcsec, which is comparable to those reported by the other epitaxial methods.
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