Abstract
A GaAs/AlAs coupled multilayer cavity structure was grown on a (001) GaAs substrate. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode light. The bottom cavity layer was grown with lateral thickness variation in the wafer to investigate the effects of the thickness difference between the two cavity layers quantitatively. The frequency difference was minimum, and the intensity ratio of the two-color emission was unity when the optical thicknesses of the two cavity layers were the same. The emission intensity ratio was explained in terms of the electric fields at the top cavity region containing the QDs.
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