Effect of carrier localization on performance of coupled large optical cavity diode lasers

Abstract

Results are presented on a comparative study of InGaAs/GaAs/AlGaAs coupled large optical cavity (CLOC) laser heterostructures emitting at either 1.03 or 0.98 μm. The smaller energy of carrier localization in the active region of the latter structure leads to stronger carrier leakage out of the quantum well that in its turn results in a higher internal optical loss, higher threshold current density and more pronounced temperature sensitivity. In continuous wave regime, the maximal output power of 8 W in the 0.98-μm lasers is found to be limited by the thermal rollover, whereas in the longer wavelength laser it is 10.8 W being limited by the catastrophic optical mirror damage.